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 P1/12
HIGH-VOLTAGE MONOLITHIC IC
ECN2102/2112
ECN2102 / 2112 is a single chip row driver IC for electroluminescent (EL) display panel. Functions * Low-voltage serial to high-voltage parallel converter * 34 outputs of totem pole type Features * Output terminal voltage up to 250V * Source / Sink current 500mA
ECN2102 ECN2112
Fig. 1. OUTLINE OF FP-48 PACKAGE
Vcc
STB Vcc
OE Q1
D
R1 34 bit static shift register R2
Q2
CLK
R34
Q34
D-FF
SO
Function Block Diagram (Positive Logic)
PDE-2102/12-0.1
P2/12
ECN2102/2112
1. GENERAL
(1) TYPE (2) APPLICATION (3) STRUCTURE (4) PACKAGE ECN2102/ECN2112 Row line driver for Electroluminecent (EL) Monolithic IC, processed Dielectric Isolation. FP-48 (Fig.1) display panel
2. MAXIMUM ALLOWABLE RATING
No ITEMS 1 2 3 4 Supply Voltage (logic) Input Voltage (logic)
(Ta=25C)
RATINGS -0.5 ~ +7.0 -0.5 ~ Vcc+0.5 Vcc 250 UNITS V V V V CONDITIONS to GND terminal to GND terminal to GND terminal Between Vs,Vcc,GND, Input and Q output
SYMBOLS Vcc Vin VSG VQ
Vs - GND Voltage Output Terminal Voltage
5 6 7
Allowable Power Dissipation Operating Temperature Storage Temperature
PT TOP Tstg
800 -40 ~ +85 -55 ~ +150
mW C C
3. RECOMMENDED OPERATING CONDITIONS
No ITEMS 1 2 3 4 5 6 7 8 Supply Voltage (logic) Clock Frequency Clock Pulse Width Data Setup Time Data Hold Time Output Terminal Voltage Peak Output Source Current Peak Output Sink Current SYMBOLS Min. Vcc fCLK twCLK tsu th VQ HIOH HIOL 5.0 80 80 80 Typ. 5.5 230 Max. 6.0 250 -500 +500 UNITS V kHz ns ns ns V mA mA Vcc= 5.5V Note 1 Note 1 Vcc= 5.5V Vin= 0V/5.5V CONDITIONS
Note1 : Conduction period 5 ms per 1 IC
PDE-2102/12-0.1
P3/12
ECN2102/2112
4. ELECTRICAL CHARACTERISTICS
No ITEMS 1 Output Voltage (logic)
(Unless otherwise specified, Ta= 25C, Vcc= 5.5V, HVCC=230V)
SYMBOLS VOL VOH
Min. 5.4 1.0 -1.0 3.5 4.5 -
Typ. -
Max. UNITS C O N D I T I O N S 0.1 1.0 0.4 10 -10 -100 10 V V mA mA V V V V mA mA mA mA
Vin=5.5V all input/1 input Vin=0V D,CLK/1 input Vin=0V STB/1 input No signal all input 5.5V, all output Off
IOL= 20mA IOH=-20mA VOL= 0.8V VOLH 4.7V D input
2
Output Current (logic)
IOL IOH
3
Input Voltage
(logic)
VIL VIH VTHL VTLH
CLK,STB input
4
Input Current
(logic)
IIH IIL
5
Dissipation Current(logic)
Istb
25 5 3.0 6.0 4.0 8.0 6.0 7.0
mA mA V V V V V/ms V/ms ms ms
No signal, 1ch source output On No signal, 1ch sink output On
6
Output Voltage
HVOL
HIOL=1mA HIOL=200mA HIOH=-1mA HIOH=-200mA
Q out-GND Q out-GND Vs-Q out Vs-Q out
HVOH
7
Output SCR dv/dt capability
dv/dt1 dv/dt2
200 200 -
Vs~Q out,+dv/dt apply.Fig.6 Q out~GND,-dv/dt apply.Fig.7
8
Output SCR Off Period
toff
Source side Sink side
Fig.8
5. SWITCHING CHARACTERISTICS (Unless otherwise specified, Ta= 25C, Vcc= 5.5V, Fig.5)
No ITEMS 1 Output Delay Time (logic) SYMBOLS tPLH tPHL 2 Output Delay Time tQLH tQHL Min. Typ. Max. UNITS C O N D I T I O N S 300 300 3 3 ns ns ms ms RLQ=1kW CLQ=2000pF CL=15pF
PDE-2102/12-0.1
P4/12
ECN2102/2112
Vcc (*) : Q outputs are "OFF" at "H" level. STB Vcc (*) OE Q1
D
R1 34 bit static shift register R2
Q2
CLK
R34
Q34
D-FF
SO
Fig. 2. Function Block Diagram (Positive Logic) 6. FUNCTION TABLE
CONTROL INPUT CLK SHIFT OPERATION noD * * * OE(*4) H H STB * * H OUTPUT OPERATION L H L SHIFT REGISTER Rn shift keep H L H L H * H * * R34 H (*2) OFF L (*3) OFF ALL OFF OUTPUT SO(*1) Q
(*1) 34th data is pushed out as output at the state of down edge of clock signal. (*2) When shift register is "H", source SCR of Q output is driven to ON. (*3) When shift register is "H", sink SCR of Q output is driven to ON. (*4) OE must be kept "H".
PDE-2102/12-0.1
P5/12
ECN2102/2112
7. INPUT / OUTPUT CIRCUIT
Equivalent of each input Typical of serial output Typical of all Q output
Pull up Vcc Vcc
Vcc
Vs source SCR
()
Input Output Q output sink SCR GND GND GND
Fig. 3. Input / Output Circuit
PDE-2102/12-0.1
P6/12
ECN2102/2112
8. EXAMPLE OF OPERATING TIMING CHART D ECN2102 CLK ECN2112 CLK H fix. OE STB +HV Vs
GND -HV ( means floating condition.)
ECN2102 Qn ECN2112 Qn
ECN2102 Qn+1 ECN2112 Qn+1
HV : High Voltage Fig. 4. Example of Operating Timing Chart
PDE-2102/12-0.1
P7/12
ECN2102/2112
9. MEASUREMENT AND MEASUREMENT CIRCUIT
1/f CLK t WCLK CLK T1
50%
Tn : Figure n means n th pulse T2 T34
50%
50%
INPUT CONDITION t ILH, t IHL =10ns typ. t ILH t IHL
90%
tsu th D
50%
t PLH SO
50%
t PHL
50%
5.5V 0V
10%
(a) Shift function (SW1(R)OFF, SW2,3(R)ON)
SW1 SW2 D CLK OE STB t QLH H fix. 50% t QHL 90% Q1 10% 90% Q2 Other Q output 10% t QLH t QHL 50% 50% 50% OFF ON OFF ON OFF ON OFF ON OFF OFF
(b) Output Function (SW3(R)OFF)
SW1 5.5V Vcc CLK D OE STB GND Q34 SO CL RLQ=1kW CLQ=2000pF CL=15pF Vs Q1 Q2 RLQ CLQ 250V
SW3 SW2
Measurement point
Fig. 5. Switching Characteristics Measurement Circuit
PDE-2102/12-0.1
P8/12
ECN2102/2112
1000pF 5.5V Vcc CLK D OE STB GND Q34 SO Vs Q1 Q2 1kW +dV/dt pulser (to reach 150V)
Fig. 6. Output SCR dV/dt capability (dV/dt1) Measurement Circuit
5.5V Vcc CLK D OE STB GND Q34 SO -dV/dt pulser (to reach -150V) Vs Q1 Q2
1000pF 1kW
Fig. 7. Output SCR dV/dt capability (dV/dt2) Measurement Circuit
PDE-2102/12-0.1
P9/12
ECN2102/2112
Io 5.5V Vcc CLK D OE STB GND SO Qn Vs
12 CLK D OE STB H fix. H fix.
34
MIN 150V Vs Io 100mA
dV/dt @ 100V/ms
tOFF
SCR OFF SCR ON by mistake
(a) Source SCR
5.5V Vcc CLK D Qn OE STB GND SO Vs
Io
12 CLK D OE STB H fix. L fix.
34
MIN 150V Vs Io 100mA
dV/dt@100V/ms
tOFF
SCR OFF SCR ON by mistake
(b) Sink SCR Fig. 8. Output SCR tOFF Measurement
PDE-2102/12-0.1
P10/12
ECN2102/2112
10. PIN LOCATION
Q34 Q33 Q32 Q31 Q30 Q29 Q28 Q27 Q26 Q25 Q24 Q23 Q22 Q21 Q20 Q19 Q18 Vs GND Vcc (NC) STB (NC) SO Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 Q9 Q10 Q11 Q12 Q13 Q14 Q15 Q16 Q17 Vs GND (NC) OE (NC) CLK D
(a) ECN2102
Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 Q9 Q10 Q11 Q12 Q13 Q14 Q15 Q16 Q17 Vs GND (NC) OE (NC) CLK D Q34 Q33 Q32 Q31 Q30 Q29 Q28 Q27 Q26 Q25 Q24 Q23 Q22 Q21 Q20 Q19 Q18 Vs GND Vcc (NC) STB (NC) SO
(b) ECN2112 Fig. 9. Pin Location (Top view)
PDE-2102/12-0.1
P11/12
ECN2102/2112
11. PACKAGE OUTLINE (1) ECN2102 (Unit : mm)
18.80.4 14.0 0.2
NOTE 2
3.05 MAX.
NOTE 3
9.20.3
NOTE 1
20.0 TYP.
9.20.3
NOTE 1
1.25 TYP.
0.150.05
SURFACE
2.40 TYP.
NOTE 5
0 - 10 1.200.20
Notes. 1. THIS DIMENSION IS MEASURED AT ROOT OF LEAD. SPACING AT TIP OF LEAD IS MIN 0.2. 2. THIS DIMENSION INCLUDES A WARPAGE OF PACKAGE. 3. MARKING IS ON THE SURFACE OF PACKAGE, INCLUDING HITACHI MARK, TYPE NAME, LOT NUMBER, AND JAPAN MARK. 4. LEADS ARE SOLDER PLATED. 5. THIS IS THE BENDING ANGLE WITH HORIZONTAL PLANE.
Fig. 10. Package outline (ECN2102)
0.80.15
0.350.1
NOTE 1
PDE-2102/12-0.1
P12/12
ECN2102/2112
(Unit : mm) (2) ECN2112
18.80.4 14.0 0.2
NOTE 2
3.05 MAX.
NOTE 3
9.20.3
NOTE 1
20.0 TYP.
9.20.3
NOTE 1
1.25 TYP.
SURFACE 0.150.05
2.40 TYP.
NOTE 5
0 - 10 1.200.20
Notes. 1. THIS DIMENSION IS MEASURED AT ROOT OF LEAD. SPACING AT TIP OF LEAD IS MIN 0.2. 2. THIS DIMENSION INCLUDES A WARPAGE OF PACKAGE. 3. MARKING IS ON THE SURFACE OF PACKAGE, INCLUDING HITACHI MARK, TYPE NAME, LOT NUMBER, AND JAPAN MARK. 4. LEADS ARE SOLDER PLATED. 5. THIS IS THE BENDING ANGLE WITH HORIZONTAL PLANE.
Fig. 11. Package outline (ECN2112)
0.80.15
0.350.1
NOTE 1
PDE-2102/12-0.1
HITACHI POWER SEMICONDUCTORS Notices
1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse


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